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ZXMP3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V GS =10V; T A =25 C (b)(d)
@V GS =10V; T A =70 C (b)(d)
@V GS =10V; T A =25 C (a)(d)
Pulsed Drain Current (c)
SYMBOL
V DSS
V GS
I D
I DM
LIMIT
-30
20
-5.5
-4.4
-4.2
-20
UNIT
V
V
A
A
A
A
Continuous Source Current (Body Diode)
(b)
I S
-3.2
A
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
I SM
P D
P D
P D
T j :T stg
-20
1.25
10
1.8
14
2.1
17
-55 to +150
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
Junction to Ambient
Junction to Ambient
(a)(d)
(b)(e)
(b)(d)
R θ JA
R θ JA
R θ JA
100
70
60
°C/W
°C/W
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ISSUE 2 - MAY 2007
2
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